Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
نویسندگان
چکیده
منابع مشابه
Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax
In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solve...
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ژورنال
عنوان ژورنال: Nanoscale Advances
سال: 2020
ISSN: 2516-0230
DOI: 10.1039/c9na00733d